Gigabyte GEN3 2500E 500GB PCIE 3.0 X4 NVME SSD (GP-G325E500G)

A worthy choice for your PC upgrade

GIGABYTE Gen3 2500E SSD adopts Phisons controller and high-quality 3D NAND, delivers up to 2300 MB/s sequential read and 1500 MB/s sequential write performance. By utilizing Host Memory Buffer technology, the SSD controller can access the host DRAM without performance loss. Furthermore, GIGABYTE Gen3 2500E SSD features TRIM, SMART, and Over-Provision support to secure your data and perform stably.

PCIe 3.0x4, NVMe1.3 interface
Sequential Read Speed : up to 2,300 MB/s
Sequential Write speed : up to 1,500 MB/s
HMB (Host Memory Buffer) supported
TRIM & S.M.A.R.T supported
Energy-efficient

Breaking the Barriers of SATA Limitations (500GB)

Outstanding performance

GIGABYTE Gen3 2500E SSD provides performance for your daily computing tasks, boast of best controller & 3D NAND flash.

Sequential read speeds up to 2300 MB/s

Sequential write speeds up to 1500 MB/s

GIGABYTE Gen3 2500E SSD gives you faster data transferring experience compared to 2.5" SATA solid state drive.

Host Memory Buffer (HMB)

The Host Memory Buffer (HMB) feature utilizes the DMA (Direct Memory Access) of PCI Express to allow SSDs to use some of the DRAM on PC system, instead of requiring the SSD to bring its own DRAM.

Power Saving While Operating

Comparing with regular PCIe 3.0 x4 SSD, GIGABYTE Gen3 2500E SSD reduces about 40%+ power while operating. Power consumption of the GIGABYTE Gen3 2500E SSD is notably improved.

SSD Tool Box

The newly updated SSD Tool Box is a software that gives users an overview of the SSD Status and various aspects such as model name, FW version, health condition and sensor temperature. Moreover, users can clear all the data with the Secure Erase function. You can download the SSD Tool Box from the link.

Key Feature

Form Factor: M.2 2280
Interface: PCI-Express 3.0 x4, NVMe 1.3
Total Capacity: 500GB*
Sequential Read Speed : up to 2300 MB/s**
Sequential Write speed : up to 1500 MB/s**
HMB (Host Memory Buffer) supported
TRIM & S.M.A.R.T support
Energy-Efficient

Technical Specifications

Interface: PCIe 3.0x4, NVMe1.3 interface

Form Factor: M.2 2280

Total Capacity: 500GB

External DDR Cache: N/A

Sequential Read speed Up to 2300 MB/s

Sequential Write speed Up to 1500 MB/s

Random Read IOPS Up to 60K

Random Write IOPS Up to 240K

Dimension 22 x 2.3 x 80 mm

Mean time between failure (MTBF) 1.5 million hours

Max. Operating Power:

Read: 2300mW

Write: 2250mW

Power Consumption (Idle, PS3) 30mW

Power Consumption(PS4, L1.2) 5mW

Temperature (Operating) 0°C to 70°C

Temperature (Storage) -40°C to 85°C