DESCRIPTION
This document describes Kingston's 512M x 64-bit (4GB)
DDR3-1600 CL9 SDRAM (Synchronous DRAM) 2Rx8 memory
module, based on sixteen 256M x 8-bit FBGA components.This
module has been tested to run at DDR3-1600 at a low latency
timing of 9-9-9 at 1.65V. The SPD is programmed to JEDEC
standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 240-
pin DIMM uses gold contact fingers. The JEDEC standard
electrical and mechanical specifications are as follows:
FEATURES
- JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
- VDDQ = 1.5V (1.425V ~ 1.575V)
- 667MHz fCK for 1333Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 9, 8, 7, 6
- Posted CAS
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- Bi-directional Differential Data Strobe
- Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
- Asynchronous Reset
- PCB : Height 1.180 (30.00mm), double sided component
SPECIFICATIONS
CL(IDD) : 9 cycles
Row Cycle Time (tRCmin) : 49.5ns (min.)
Refresh to Active/Refresh : 160ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) : 36ns (min.)
Maximum Operating Power : 2.400 W*
UL Rating : 94 V - 0
Operating Temperature : 0o C to 85o C
Storage Temperature : -55o C to +100o C
