Technical Specifications
Internal memory: 4 GB
Internal memory type: DDR4
Memory clock speed: 3200 MHz
Component for: Notebook
Memory form factor: 260-pin SO-DIMM
Memory layout (modules x size): 1 x 4 GB|
Buffered memory type: Unregistered (unbuffered)
CAS latency: 22
Memory voltage: 1.2 V
Row cycle time: 45.75 ns
Refresh row cycle time: 350 ns
Row active time: 32 ns
Halogen-free
Lead plating: Gold
RoHS compliance
Located in the Philippines!
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